CS20-16IO1 single thyristor thyristor 2 1 3 part number CS20-16IO1 backside: anode tav t v v 1,23 rrm 20 1600 = v = v i = a features / advantages: applications: package: thyristor for line frequency planar passivated chip long-term stability line rectifying 50/60 hz softstart ac motor control dc motor control power converter ac power control lighting and temperature control to-247 industry standard outline rohs compliant epoxy meets ul 94v-0 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact the sales office, which is responsible for yo u. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact the sales office, whi ch is responsible for you. should you intend to use the product in aviation, i n health or live endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms conditions of usage: ixys reserves the right to change limits, condition s and dimensions. 20150827b data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
CS20-16IO1 v = v a2s a2s a2s a2s symbol definition ratings typ. max. i v i a v t 1,27 r 0,6 k/w min. 20 v v 20 t = 25c vj t = c vj ma 2 v = v t = 25c vj i = a t v t = c c 130 p tot 200 w t = 25c c 20 1600 forward voltage drop total power dissipation conditions unit 1,53 t = 25c vj 125 v t0 v 0,87 t = c vj 150 r t 17,3 m ? v 1,23 t = c vj i = a t v 20 1,57 i = a40 i = a40 threshold voltage slope resistance for power loss calculation only a 125 v v 1600 t = 25c vj i a 31 p gm w t = 30 s 10 max. gate power dissipation p t = c c 150 w t = 5 p p gav w 0,5 average gate power dissipation c j 16 junction capacitance v = v400 t = 25c f = 1 mhz r vj pf i tsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r thjc thermal resistance junction to case t = c vj 150 260 280 240 240 aa a a 220 240 340 325 1600 300 s rms forward current t(rms) tav 180 sine average forward current (di/dt) cr a/s 150 repetitive, i = t vj = 125 c; f = 50 hz critical rate of rise of current v gt gate trigger voltage v = 6 v t = c25 (dv/dt) t = 125c critical rate of rise of voltage a/s 500 v/s t = s; i a; v = ? v r = ; method 1 (linear voltage rise) vj d vj 60 a t pg = 0,3 di /dt a/s; g = 0,3 drm cr v = ? v drm gk 1000 1,3 v t = c -40 vj i gt gate trigger current v = 6 v t = c25 d vj 50 ma t = c -40 vj 1,6 v 80 ma v gd gate non-trigger voltage t = c vj 0,2 v i gd gate non-trigger current 5 ma v = ? v d drm 125 latching current t = c vj 150 ma i l 25 t s p = 10 i a; g = 0,3 di /dt a/s g = 0,3 holding current t = c vj 100 ma i h 25 v = 6 v d r = gk gate controlled delay time t = c vj 2 s t gd 25 i a; g = 0,3 di /dt a/s g = 0,3 v = ? v d drm turn-off time t = c vj 150 s t q di/dt = a/s 15 dv/dt = v/s 20 v = r 100 v; i a; t = 20 v = ? v drm t s p = 200 non-repet., i = 20 a t 125 r thch thermal resistance case to heatsink k/w thyristor 1700 rrm/drm rsm/dsm max. non-repetitive reverse/forward blocking voltag e max. repetitive reverse/forward blocking voltage r/d reverse current, drain current tt r/d r/d 200 0,25 ixys reserves the right to change limits, condition s and dimensions. 20150827b data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
CS20-16IO1 ratings pr odu c t m a rk in g date code part no. logo ixys abcd assembly code zyyww assembly line xxxxxxxxx cs20-14io1 to-247ad (3) 1400 package t op c m d nm 1,2 mounting torque 0,8 t vj c 150 virtual junction temperature -40 weight g 6 symbol definition typ. max. min. conditions operation temperature unit f c n 120 mounting force with clip 20 i rms rms current 70 a per terminal 125 -40 to-247 similar part package voltage class cs20-12io1 to-247ad (3) 1200 delivery mode quantity code no. ordering number marking on product ordering CS20-16IO1 466530 tube 30 CS20-16IO1 standard t stg c 150 storage temperature -40 threshold voltage v 0,87 m ? v 0 max r 0 max slope resistance * 14,8 equivalent circuits for simulation t = vj i v 0 r 0 thyristor 150 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20150827b data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
CS20-16IO1 s ? p ? p1 d2 d1 e1 4 1 2 3 l l1 2x b2 3x b b4 2x e 2x e2 d e q a a2 a1 c sym. inches millimeter min. max. min. max. a 0.185 0.209 4.70 5.30 a1 0.087 0.102 2.21 2.59 a2 0.059 0.098 1.50 2.49 d 0.819 0.845 20.79 21.45 e 0.610 0.640 15.48 16.24 e2 0.170 0.216 4.31 5.48 e 0.215 bsc 5.46 bsc l 0.780 0.800 19.80 20.30 l1 - 0.177 - 4.49 ? p 0.140 0.144 3.55 3.65 q 0.212 0.244 5.38 6.19 s 0.242 bsc 6.14 bsc b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 d1 0.515 - 13.07 - d2 0.020 0.053 0.51 1.35 e1 0.530 - 13.45 - ? p1 - 0.29 - 7.39 2 1 3 outlines to-247 ixys reserves the right to change limits, condition s and dimensions. 20150827b data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
CS20-16IO1 0,01 0,1 1 50 100 150 200 2 5 0 0,5 1,0 1,5 2,0 0 20 40 60 10 0 10 1 10 2 10 3 10 4 0,0 0,2 0,4 0,6 i tsm [a] i t [ a] v t [v] t [ms] z thjc [k/w] 2 3 4 5 6 7 8 9 01 1 10 100 1 0 00 i 2 t [a 2 s] t [ms] i t(av)m [a] t c [c] 0 25 50 75 100 125 150 0 20 40 60 80 fig. 1 forward characteristics fig. 3 i 2 t versus time (1-10 ms) t [s] fig. 6 max. forward current at case temperature fig. 2 surge overload current fig. 8 transient thermal impedance junction to case t vj = 25c t vj = 125c t vj = 45c 50 hz, 80% v rrm t vj = 125c t vj = 45c v r = 0 v 125c 150c 0 10 20 0 10 20 30 i t(av) [a] p (av) [w] fig. 7a power dissipation versus direct output current fig. 7b and ambient temperature 0 50 100 150 t amb [c] dc = 1 0.5 0.4 0.33 0.17 0.08 10 100 1000 1 10 100 1000 1 10 100 1000 10000 0,1 1 10 i g [ma] v g [v] t gd [s] i g [ma] typ. limit t vj = 125c fig. 4 gate trigger characteristics fig. 5 gate controlled delay time 1: i gd , t vj = 150c 2: i gt , t vj = 25c 3: i gt , t vj = -40c dc = 1 0.5 0.4 0.33 0.17 0.08 r thha 0.6 0.8 1.0 2.0 4.0 8.0 4: p gav = 0.5 w 5: p gm = 5 w 6: p gm = 10 w r thi [k/w] t i [s] 0.08 0.01 0.06 0.0001 0.20 0.03 0.10 0.30 0.16 0.11 5 4 6 3 2 1 thyristor ixys reserves the right to change limits, condition s and dimensions. 20150827b data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
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